Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

One of the main challenges for industrialization passivating contact approach Si solar cells is metallization with screen‐printed paste while maintaining low saturation current density. Using a non‐commercial Ag to metallize atmospheric pressure chemical vapor deposition (APCVD) (n) poly‐Si, metal formation contacts on planar and textured substrates investigated. The creates deep imprints caused by silver crystallite at pyramid tips silicon wafers. In contrast, wafers, growth stops interface between poly‐Si wafer. Similar resistivities are determined comparing samples. On samples, resistivity 4.6(14) mΩcm 2 density only 141(10) fA cm −2 metallized area demonstrated. Textured samples 2.7(17) show higher 480(40) . This etching behavior investigated structural elemental analyses using scanning electron microscopy.